FDP12N50 Pagpepresyo (USD) [99972pcs Stock]
- 1 pcs$0.39112
- 1,000 pcs$0.31539
- Bilang ng Bahagi:
- FDP12N50
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 500V 11.5A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDP12N50 electronic components. FDP12N50 can be shipped within 24 hours after order. If you have any demands for FDP12N50, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP12N50 Mga katangian ng produkto
Bilang ng Bahagi :
FDP12N50
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 500V 11.5A TO-220
Serye :
UniFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1315pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
165W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3
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