BTS282ZE3180AATMA2 Pagpepresyo (USD) [31424pcs Stock]
- 1 pcs$1.31155
- 1,000 pcs$1.00084
- Bilang ng Bahagi:
- BTS282ZE3180AATMA2
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 49V 80A TO-220-7.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Diode - Rectifiers - Single, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BTS282ZE3180AATMA2 electronic components. BTS282ZE3180AATMA2 can be shipped within 24 hours after order. If you have any demands for BTS282ZE3180AATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BTS282ZE3180AATMA2 Mga katangian ng produkto
Bilang ng Bahagi :
BTS282ZE3180AATMA2
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 49V 80A TO-220-7
Serye :
TEMPFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
49V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id :
2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
232nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Tampok ng FET :
Temperature Sensing Diode
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO263-7-1
Pakete / Kaso :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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