IXFH50N60X Pagpepresyo (USD) [12814pcs Stock]
- 1 pcs$3.55554
- 50 pcs$3.53785
- Bilang ng Bahagi:
- IXFH50N60X
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 50A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFH50N60X electronic components. IXFH50N60X can be shipped within 24 hours after order. If you have any demands for IXFH50N60X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH50N60X Mga katangian ng produkto
Bilang ng Bahagi :
IXFH50N60X
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 50A TO247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
50A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
73 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
116nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4660pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
660W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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