CSD88539NDT Pagpepresyo (USD) [144509pcs Stock]
- 1 pcs$0.26909
- 250 pcs$0.26775
- 1,250 pcs$0.16666
- Bilang ng Bahagi:
- CSD88539NDT
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 15A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Single, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD88539NDT electronic components. CSD88539NDT can be shipped within 24 hours after order. If you have any demands for CSD88539NDT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD88539NDT Mga katangian ng produkto
Bilang ng Bahagi :
CSD88539NDT
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET 2N-CH 60V 15A 8SOIC
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
15A
Rds On (Max) @ Id, Vgs :
28 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
741pF @ 30V
Kapangyarihan - Max :
2.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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