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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. EFC6601R-TR

ON Semiconductor - EFC6601R-TR

KEY Part #: K6523241

EFC6601R-TR Pagpepresyo (USD) [370455pcs Stock]

  • 1 pcs$0.10034
  • 5,000 pcs$0.09984
Bilang ng Bahagi:
EFC6601R-TR
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET 2N-CH EFCP.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor EFC6601R-TR electronic components. EFC6601R-TR can be shipped within 24 hours after order. If you have any demands for EFC6601R-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EFC6601R-TR Mga katangian ng produkto

Bilang ng Bahagi : EFC6601R-TR
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET 2N-CH EFCP
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate, 2.5V Drive
Drain sa Source Voltage (Vdss) : -
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : -
Rds On (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Kapangyarihan - Max : 2W
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-XFBGA, FCBGA
Package ng Tagabigay ng Device : EFCP2718-6CE-020

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