PMDT290UNE,115 Pagpepresyo (USD) [753292pcs Stock]
- 1 pcs$0.04935
- 4,000 pcs$0.04910
- Bilang ng Bahagi:
- PMDT290UNE,115
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 0.8A SOT666.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PMDT290UNE,115 electronic components. PMDT290UNE,115 can be shipped within 24 hours after order. If you have any demands for PMDT290UNE,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDT290UNE,115 Mga katangian ng produkto
Bilang ng Bahagi :
PMDT290UNE,115
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET 2N-CH 20V 0.8A SOT666
Serye :
Automotive, AEC-Q101, TrenchMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
800mA
Rds On (Max) @ Id, Vgs :
380 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
83pF @ 10V
Kapangyarihan - Max :
500mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
SOT-666
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