PMN55ENEH Pagpepresyo (USD) [566109pcs Stock]
- 1 pcs$0.06534
- Bilang ng Bahagi:
- PMN55ENEH
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- PMN55ENE/SOT457/SC-74.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Transistor - Espesyal na Pakay, Diode - Zener - Single and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PMN55ENEH electronic components. PMN55ENEH can be shipped within 24 hours after order. If you have any demands for PMN55ENEH, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMN55ENEH Mga katangian ng produkto
Bilang ng Bahagi :
PMN55ENEH
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
PMN55ENE/SOT457/SC-74
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
646pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
560mW (Ta), 6.25mW (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-TSOP
Pakete / Kaso :
SC-74, SOT-457
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