IRF5802TRPBF Pagpepresyo (USD) [420018pcs Stock]
- 1 pcs$0.08806
- 3,000 pcs$0.06959
- Bilang ng Bahagi:
- IRF5802TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 150V 0.9A 6-TSOP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Mga module ng Power driver and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF5802TRPBF electronic components. IRF5802TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5802TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5802TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF5802TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 150V 0.9A 6-TSOP
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
900mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.2 Ohm @ 540mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
88pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Micro6™(TSOP-6)
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
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