IPW60R055CFD7XKSA1 Pagpepresyo (USD) [8261pcs Stock]
- 1 pcs$4.98872
- Bilang ng Bahagi:
- IPW60R055CFD7XKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPW60R055CFD7XKSA1 electronic components. IPW60R055CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R055CFD7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R055CFD7XKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPW60R055CFD7XKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
HIGH POWERNEW
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
38A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs :
79nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3194pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
178W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO247-3
Pakete / Kaso :
TO-247-3
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