[4073pcs Stock]
- Bilang ng Bahagi:
- IRFH4257DTRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 25V 25A 24PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH4257DTRPBF electronic components. IRFH4257DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFH4257DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH4257DTRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH4257DTRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 25V 25A 24PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
25A
Rds On (Max) @ Id, Vgs :
3.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1321pF @ 13V
Kapangyarihan - Max :
25W, 28W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
Dual PQFN (5x4)
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