IXFH60N20 Pagpepresyo (USD) [9207pcs Stock]
- 1 pcs$5.17311
- 30 pcs$5.14738
- Bilang ng Bahagi:
- IXFH60N20
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 60A TO-247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFH60N20 electronic components. IXFH60N20 can be shipped within 24 hours after order. If you have any demands for IXFH60N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH60N20 Mga katangian ng produkto
Bilang ng Bahagi :
IXFH60N20
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 200V 60A TO-247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
33 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5200pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AD (IXFH)
Pakete / Kaso :
TO-247-3
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