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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  5. NVMFD5877NLT3G

ON Semiconductor - NVMFD5877NLT3G

KEY Part #: K6521922

NVMFD5877NLT3G Pagpepresyo (USD) [224453pcs Stock]

  • 1 pcs$0.16479
  • 5,000 pcs$0.14980
Bilang ng Bahagi:
NVMFD5877NLT3G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET 2N-CH 60V 6A 8SOIC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - SCR - Mga Module and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NVMFD5877NLT3G electronic components. NVMFD5877NLT3G can be shipped within 24 hours after order. If you have any demands for NVMFD5877NLT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5877NLT3G Mga katangian ng produkto

Bilang ng Bahagi : NVMFD5877NLT3G
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET 2N-CH 60V 6A 8SOIC
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A
Rds On (Max) @ Id, Vgs : 39 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V
Kapangyarihan - Max : 3.2W
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerTDFN
Package ng Tagabigay ng Device : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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