Microsemi Corporation - APTM60A11FT1G

KEY Part #: K6522631

APTM60A11FT1G Pagpepresyo (USD) [2469pcs Stock]

  • 1 pcs$17.54401
  • 100 pcs$17.32427

Bilang ng Bahagi:
APTM60A11FT1G
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
MOSFET 2N-CH 600V 40A SP1.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation APTM60A11FT1G electronic components. APTM60A11FT1G can be shipped within 24 hours after order. If you have any demands for APTM60A11FT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM60A11FT1G Mga katangian ng produkto

Bilang ng Bahagi : APTM60A11FT1G
Tagagawa : Microsemi Corporation
Paglalarawan : MOSFET 2N-CH 600V 40A SP1
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Half Bridge)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 40A
Rds On (Max) @ Id, Vgs : 132 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 10552pF @ 25V
Kapangyarihan - Max : 390W
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : SP1
Package ng Tagabigay ng Device : SP1