IXTP3N100P Pagpepresyo (USD) [36780pcs Stock]
- 1 pcs$1.23871
- 50 pcs$1.23255
- Bilang ng Bahagi:
- IXTP3N100P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 3A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - Mga SCR, Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module, Mga Transistor - JFET, Diode - Rectifiers - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTP3N100P electronic components. IXTP3N100P can be shipped within 24 hours after order. If you have any demands for IXTP3N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP3N100P Mga katangian ng produkto
Bilang ng Bahagi :
IXTP3N100P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 3A TO-220
Serye :
PolarVHV™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.8 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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