[2458pcs Stock]
- Bilang ng Bahagi:
- TK16V60W,LVQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 15.8A 5DFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays, Diode - RF and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK16V60W,LVQ electronic components. TK16V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK16V60W,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK16V60W,LVQ Mga katangian ng produkto
Bilang ng Bahagi :
TK16V60W,LVQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 15.8A 5DFN
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
15.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
139W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-DFN-EP (8x8)
Pakete / Kaso :
4-VSFN Exposed Pad
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