IXTX32P60P Pagpepresyo (USD) [6044pcs Stock]
- 1 pcs$8.24211
- 10 pcs$7.12568
- 100 pcs$6.05685
- Bilang ng Bahagi:
- IXTX32P60P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET P-CH 600V 32A PLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Programmable Unijunction, Transistors - IGBTs - Single and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTX32P60P electronic components. IXTX32P60P can be shipped within 24 hours after order. If you have any demands for IXTX32P60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX32P60P Mga katangian ng produkto
Bilang ng Bahagi :
IXTX32P60P
Tagagawa :
IXYS
Paglalarawan :
MOSFET P-CH 600V 32A PLUS247
Serye :
PolarP™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
32A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
350 mOhm @ 16A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
196nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
890W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS247™-3
Pakete / Kaso :
TO-247-3
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