FQPF6N80T Pagpepresyo (USD) [70805pcs Stock]
- 1 pcs$0.59655
- 1,000 pcs$0.59358
- Bilang ng Bahagi:
- FQPF6N80T
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 3.3A TO-220F.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQPF6N80T electronic components. FQPF6N80T can be shipped within 24 hours after order. If you have any demands for FQPF6N80T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQPF6N80T Mga katangian ng produkto
Bilang ng Bahagi :
FQPF6N80T
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 800V 3.3A TO-220F
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.95 Ohm @ 1.65A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
51W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220F
Pakete / Kaso :
TO-220-3 Full Pack
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