[1353pcs Stock]
- Bilang ng Bahagi:
- IRFHM830DTR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 20A PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Espesyal na Pakay, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single, Diode - Zener - Single and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFHM830DTR2PBF electronic components. IRFHM830DTR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM830DTR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM830DTR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFHM830DTR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 20A PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Ta), 40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1797pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.8W (Ta), 37W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PQFN (3x3)
Pakete / Kaso :
8-VQFN Exposed Pad
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