IPB180N03S4L01ATMA1 Pagpepresyo (USD) [68218pcs Stock]
- 1 pcs$0.57317
- 1,000 pcs$0.52583
- Bilang ng Bahagi:
- IPB180N03S4L01ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 180A TO263-7-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPB180N03S4L01ATMA1 electronic components. IPB180N03S4L01ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N03S4L01ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N03S4L01ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPB180N03S4L01ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 180A TO263-7-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
180A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.05 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs :
239nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
17600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
188W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO263-7-3
Pakete / Kaso :
TO-263-7, D²Pak (6 Leads + Tab)
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