Bilang ng Bahagi :
US6J11TR
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET 2P-CH 12V 1.3A TUMT6
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.3A
Rds On (Max) @ Id, Vgs :
260 mOhm @ 1.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 6V
Kapangyarihan - Max :
320mW
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-SMD, Flat Leads
Package ng Tagabigay ng Device :
TUMT6