[29pcs Stock]
- Bilang ng Bahagi:
- ZXMN6A25G
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 4.8A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga SCR and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated ZXMN6A25G electronic components. ZXMN6A25G can be shipped within 24 hours after order. If you have any demands for ZXMN6A25G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN6A25G Mga katangian ng produkto
Bilang ng Bahagi :
ZXMN6A25G
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 60V 4.8A SOT223
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
50 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1063pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223
Pakete / Kaso :
TO-261-4, TO-261AA
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