IXYS - IXFP6N120P

KEY Part #: K6398897

IXFP6N120P Pagpepresyo (USD) [13592pcs Stock]

  • 1 pcs$3.33169
  • 10 pcs$2.99940
  • 100 pcs$2.46629
  • 500 pcs$2.06634
  • 1,000 pcs$1.79971

Bilang ng Bahagi:
IXFP6N120P
Tagagawa:
IXYS
Detalyadong Paglalarawan:
MOSFET N-CH 1200V 6A TO-220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in IXYS IXFP6N120P electronic components. IXFP6N120P can be shipped within 24 hours after order. If you have any demands for IXFP6N120P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP6N120P Mga katangian ng produkto

Bilang ng Bahagi : IXFP6N120P
Tagagawa : IXYS
Paglalarawan : MOSFET N-CH 1200V 6A TO-220AB
Serye : HiPerFET™, PolarP2™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2830pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 250W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220AB
Pakete / Kaso : TO-220-3

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