RUC002N05HZGT116 Pagpepresyo (USD) [2710765pcs Stock]
- 1 pcs$0.01364
- Bilang ng Bahagi:
- RUC002N05HZGT116
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- 1.2V DRIVE NCH MOSFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Transistor - IGBTs - Mga Module, Mga Transistor - JFET and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor RUC002N05HZGT116 electronic components. RUC002N05HZGT116 can be shipped within 24 hours after order. If you have any demands for RUC002N05HZGT116, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUC002N05HZGT116 Mga katangian ng produkto
Bilang ng Bahagi :
RUC002N05HZGT116
Tagagawa :
Rohm Semiconductor
Paglalarawan :
1.2V DRIVE NCH MOSFET
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
50V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
25pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
350mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SST3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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