TSM4ND60CI Pagpepresyo (USD) [82036pcs Stock]
- 1 pcs$0.47663
- Bilang ng Bahagi:
- TSM4ND60CI
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- 600V 4A SINGLE N-CHANNEL POWER M.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Diode - Rectifiers - Arrays, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Diode - Zener - Single, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM4ND60CI electronic components. TSM4ND60CI can be shipped within 24 hours after order. If you have any demands for TSM4ND60CI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM4ND60CI Mga katangian ng produkto
Bilang ng Bahagi :
TSM4ND60CI
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
600V 4A SINGLE N-CHANNEL POWER M
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
582pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
41.6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ITO-220
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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