Vishay Siliconix - SQJ459EP-T1_GE3

KEY Part #: K6416165

SQJ459EP-T1_GE3 Pagpepresyo (USD) [147465pcs Stock]

  • 1 pcs$0.25082
  • 3,000 pcs$0.21196

Bilang ng Bahagi:
SQJ459EP-T1_GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET P-CH 60V 52A POWERPAKSO-8.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Diode - RF, Mga module ng Power driver and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SQJ459EP-T1_GE3 electronic components. SQJ459EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ459EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ459EP-T1_GE3 Mga katangian ng produkto

Bilang ng Bahagi : SQJ459EP-T1_GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET P-CH 60V 52A POWERPAKSO-8
Serye : Automotive, AEC-Q101, TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 52A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 18 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 108nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4586pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 83W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PowerPAK® SO-8
Pakete / Kaso : PowerPAK® SO-8

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