SUD35N10-26P-GE3 Pagpepresyo (USD) [84291pcs Stock]
- 1 pcs$0.46388
- 2,000 pcs$0.43461
- Bilang ng Bahagi:
- SUD35N10-26P-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 35A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SUD35N10-26P-GE3 electronic components. SUD35N10-26P-GE3 can be shipped within 24 hours after order. If you have any demands for SUD35N10-26P-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD35N10-26P-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SUD35N10-26P-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 100V 35A DPAK
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
35A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 12V
Tampok ng FET :
-
Power Dissipation (Max) :
8.3W (Ta), 83W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252, (D-Pak)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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