FCP850N80Z Pagpepresyo (USD) [71431pcs Stock]
- 1 pcs$0.73000
- 800 pcs$0.72637
- Bilang ng Bahagi:
- FCP850N80Z
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 8A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Diode - Zener - Single, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Diode - Rectifiers - Arrays and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FCP850N80Z electronic components. FCP850N80Z can be shipped within 24 hours after order. If you have any demands for FCP850N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP850N80Z Mga katangian ng produkto
Bilang ng Bahagi :
FCP850N80Z
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 800V 8A
Serye :
SuperFET® II
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1315pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
136W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3
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