VMO580-02F Pagpepresyo (USD) [701pcs Stock]
- 1 pcs$69.48370
- 10 pcs$64.94178
- 25 pcs$62.67126
- Bilang ng Bahagi:
- VMO580-02F
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 580A MODULE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Diode - RF and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS VMO580-02F electronic components. VMO580-02F can be shipped within 24 hours after order. If you have any demands for VMO580-02F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VMO580-02F Mga katangian ng produkto
Bilang ng Bahagi :
VMO580-02F
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 200V 580A MODULE
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
580A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.8 mOhm @ 430A, 10V
Vgs (th) (Max) @ Id :
4V @ 50mA
Gate Charge (Qg) (Max) @ Vgs :
2750nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
Y3-Li
Pakete / Kaso :
Y3-Li
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