[995pcs Stock]
- Bilang ng Bahagi:
- 2SJ304(F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P-CH 60V 14A TO220NIS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SJ304(F) electronic components. 2SJ304(F) can be shipped within 24 hours after order. If you have any demands for 2SJ304(F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ304(F) Mga katangian ng produkto
Bilang ng Bahagi :
2SJ304(F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 60V 14A TO220NIS
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
14A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
40W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220NIS
Pakete / Kaso :
TO-220-3 Full Pack
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