IRFR9N20DPBF Pagpepresyo (USD) [13617pcs Stock]
- 3,000 pcs$0.19186
- Bilang ng Bahagi:
- IRFR9N20DPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 9.4A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Diode - RF, Mga module ng Power driver, Transistor - IGBTs - Mga Module and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFR9N20DPBF electronic components. IRFR9N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFR9N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9N20DPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFR9N20DPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 9.4A DPAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
86W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D-Pak
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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