IPI076N12N3GAKSA1 Pagpepresyo (USD) [50688pcs Stock]
- 1 pcs$0.77139
- 500 pcs$0.74609
- Bilang ng Bahagi:
- IPI076N12N3GAKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 120V 100A TO262-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPI076N12N3GAKSA1 electronic components. IPI076N12N3GAKSA1 can be shipped within 24 hours after order. If you have any demands for IPI076N12N3GAKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI076N12N3GAKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPI076N12N3GAKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 120V 100A TO262-3
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
120V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs :
101nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6640pF @ 60V
Tampok ng FET :
-
Power Dissipation (Max) :
188W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO262-3
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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