FDD3670 Pagpepresyo (USD) [78456pcs Stock]
- 1 pcs$0.50087
- 2,500 pcs$0.49838
- Bilang ng Bahagi:
- FDD3670
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 34A D-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Mga module ng Power driver and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDD3670 electronic components. FDD3670 can be shipped within 24 hours after order. If you have any demands for FDD3670, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD3670 Mga katangian ng produkto
Bilang ng Bahagi :
FDD3670
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 100V 34A D-PAK
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
34A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
32 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2490pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 83W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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