FQU12N20TU Pagpepresyo (USD) [163825pcs Stock]
- 1 pcs$0.24679
- 5,040 pcs$0.24557
- Bilang ng Bahagi:
- FQU12N20TU
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 9A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Mga module ng Power driver, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQU12N20TU electronic components. FQU12N20TU can be shipped within 24 hours after order. If you have any demands for FQU12N20TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU12N20TU Mga katangian ng produkto
Bilang ng Bahagi :
FQU12N20TU
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 200V 9A IPAK
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
280 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
910pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 55W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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