BSZ180P03NS3EGATMA1 Pagpepresyo (USD) [365089pcs Stock]
- 1 pcs$0.10131
- 5,000 pcs$0.09726
- Bilang ng Bahagi:
- BSZ180P03NS3EGATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 39.6A TSDSON-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - SCR - Mga Module, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSZ180P03NS3EGATMA1 electronic components. BSZ180P03NS3EGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ180P03NS3EGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ180P03NS3EGATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSZ180P03NS3EGATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 30V 39.6A TSDSON-8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Ta), 39.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2220pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2.1W (Ta), 40W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TSDSON-8
Pakete / Kaso :
8-PowerTDFN
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