STH80N10F7-2 Pagpepresyo (USD) [63971pcs Stock]
- 1 pcs$0.61123
- 1,000 pcs$0.54617
- Bilang ng Bahagi:
- STH80N10F7-2
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 80A H2PAK-2.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STH80N10F7-2 electronic components. STH80N10F7-2 can be shipped within 24 hours after order. If you have any demands for STH80N10F7-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH80N10F7-2 Mga katangian ng produkto
Bilang ng Bahagi :
STH80N10F7-2
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 100V 80A H2PAK-2
Serye :
DeepGATE™, STripFET™ VII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
110W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
H2Pak-2
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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