Toshiba Semiconductor and Storage - SSM3K59CTB,L3F

KEY Part #: K6416468

SSM3K59CTB,L3F Pagpepresyo (USD) [934746pcs Stock]

  • 1 pcs$0.04375
  • 10,000 pcs$0.04353

Bilang ng Bahagi:
SSM3K59CTB,L3F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET N-CH 40V 2A CST3B.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Diode - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage SSM3K59CTB,L3F electronic components. SSM3K59CTB,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K59CTB,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K59CTB,L3F Mga katangian ng produkto

Bilang ng Bahagi : SSM3K59CTB,L3F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET N-CH 40V 2A CST3B
Serye : U-MOSVII-H
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.8V, 8V
Rds On (Max) @ Id, Vgs : 215 mOhm @ 1A, 8V
Vgs (th) (Max) @ Id : 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 1.1nC @ 4.2V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 130pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 1W (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : CST3B
Pakete / Kaso : 3-SMD, No Lead

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