HTMN5130SSD-13 Pagpepresyo (USD) [92797pcs Stock]
- 1 pcs$0.42136
- 2,500 pcs$0.37135
- Bilang ng Bahagi:
- HTMN5130SSD-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 55V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated HTMN5130SSD-13 electronic components. HTMN5130SSD-13 can be shipped within 24 hours after order. If you have any demands for HTMN5130SSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTMN5130SSD-13 Mga katangian ng produkto
Bilang ng Bahagi :
HTMN5130SSD-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 55V 2.6A 8SOIC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.6A
Rds On (Max) @ Id, Vgs :
130 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
218.7pF @ 25V
Kapangyarihan - Max :
1.7W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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