2SK1835-E Pagpepresyo (USD) [12469pcs Stock]
- 1 pcs$3.63577
- Bilang ng Bahagi:
- 2SK1835-E
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH 1500V 4A TO-3P.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Diode - RF and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America 2SK1835-E electronic components. 2SK1835-E can be shipped within 24 hours after order. If you have any demands for 2SK1835-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK1835-E Mga katangian ng produkto
Bilang ng Bahagi :
2SK1835-E
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH 1500V 4A TO-3P
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
15V
Rds On (Max) @ Id, Vgs :
7 Ohm @ 2A, 15V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P
Pakete / Kaso :
TO-3P-3, SC-65-3
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