[12788pcs Stock]
- Bilang ng Bahagi:
- STD1HNC60T4
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 2A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Arrays, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STD1HNC60T4 electronic components. STD1HNC60T4 can be shipped within 24 hours after order. If you have any demands for STD1HNC60T4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD1HNC60T4 Mga katangian ng produkto
Bilang ng Bahagi :
STD1HNC60T4
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 600V 2A DPAK
Serye :
PowerMESH™ II
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
228pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
50W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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