ON Semiconductor - NVTR01P02LT1G

KEY Part #: K6392793

NVTR01P02LT1G Pagpepresyo (USD) [792956pcs Stock]

  • 1 pcs$0.04665
  • 3,000 pcs$0.04479

Bilang ng Bahagi:
NVTR01P02LT1G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET P-CH 20V 1.3A SOT23.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Diode - RF and Transistor - IGBTs - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NVTR01P02LT1G electronic components. NVTR01P02LT1G can be shipped within 24 hours after order. If you have any demands for NVTR01P02LT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVTR01P02LT1G Mga katangian ng produkto

Bilang ng Bahagi : NVTR01P02LT1G
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET P-CH 20V 1.3A SOT23
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 220 mOhm @ 750mA, 4.5V
Vgs (th) (Max) @ Id : 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.1nC @ 4V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 225pF @ 5V
Tampok ng FET : -
Power Dissipation (Max) : 400mW (Ta)
Temperatura ng pagpapatakbo : -
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SOT-23-3
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

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