IRF6645TRPBF Pagpepresyo (USD) [137353pcs Stock]
- 1 pcs$0.27063
- 4,800 pcs$0.26929
- Bilang ng Bahagi:
- IRF6645TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 5.7A DIRECTFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Diode - RF and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF6645TRPBF electronic components. IRF6645TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6645TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6645TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF6645TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 5.7A DIRECTFET
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.7A (Ta), 25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
35 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.2W (Ta), 42W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DIRECTFET™ SJ
Pakete / Kaso :
DirectFET™ Isometric SJ
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