IPD60N10S4L12ATMA1 Pagpepresyo (USD) [173756pcs Stock]
- 1 pcs$0.21287
- 2,500 pcs$0.19527
- Bilang ng Bahagi:
- IPD60N10S4L12ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH TO252-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Mga module ng Power driver, Thyristors - SCR - Mga Module, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPD60N10S4L12ATMA1 electronic components. IPD60N10S4L12ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60N10S4L12ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60N10S4L12ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPD60N10S4L12ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH TO252-3
Serye :
Automotive, AEC-Q101, HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3170pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
94W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3-313
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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