Toshiba Semiconductor and Storage - SSM3J334R,LF

KEY Part #: K6416955

SSM3J334R,LF Pagpepresyo (USD) [1169017pcs Stock]

  • 1 pcs$0.03498
  • 3,000 pcs$0.03480

Bilang ng Bahagi:
SSM3J334R,LF
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET P CH 30V 4A SOT-23F.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Diode - RF, Diode - Mga Rectifier ng Bridge, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage SSM3J334R,LF electronic components. SSM3J334R,LF can be shipped within 24 hours after order. If you have any demands for SSM3J334R,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J334R,LF Mga katangian ng produkto

Bilang ng Bahagi : SSM3J334R,LF
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET P CH 30V 4A SOT-23F
Serye : U-MOSVI
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 71 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 5.9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 1W (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SOT-23F
Pakete / Kaso : SOT-23-3 Flat Leads

Maaari ka ring Makisalamuha sa
  • ZVN3306A

    Diodes Incorporated

    MOSFET N-CH 60V 270MA TO92-3.

  • FQN1N60CTA

    ON Semiconductor

    MOSFET N-CH 600V 300MA TO-92.

  • FDD8870

    ON Semiconductor

    MOSFET N-CH 30V 160A D-PAK.

  • TK33S10N1Z,LQ

    Toshiba Semiconductor and Storage

    MOSFET N-CH 100V 33A DPAK.

  • IRFR4105TRPBF

    Infineon Technologies

    MOSFET N-CH 55V 27A DPAK.

  • IRLR3636TRPBF

    Infineon Technologies

    MOSFET N-CH 60V 50A DPAK.