TK33S10N1Z,LQ Pagpepresyo (USD) [146815pcs Stock]
- 1 pcs$0.27851
- 2,000 pcs$0.27713
- Bilang ng Bahagi:
- TK33S10N1Z,LQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 33A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Arrays, Transistors - IGBTs - Single, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK33S10N1Z,LQ electronic components. TK33S10N1Z,LQ can be shipped within 24 hours after order. If you have any demands for TK33S10N1Z,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK33S10N1Z,LQ Mga katangian ng produkto
Bilang ng Bahagi :
TK33S10N1Z,LQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 100V 33A DPAK
Serye :
U-MOSVIII-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
33A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK+
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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