SI7810DN-T1-GE3 Pagpepresyo (USD) [158886pcs Stock]
- 1 pcs$0.23279
- 3,000 pcs$0.19673
- Bilang ng Bahagi:
- SI7810DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 3.4A 1212-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Diode - Mga Rectifier ng Bridge, Diode - RF, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Mga Transistor - JFET and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI7810DN-T1-GE3 electronic components. SI7810DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7810DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7810DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI7810DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 100V 3.4A 1212-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
62 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
1.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8
Pakete / Kaso :
PowerPAK® 1212-8
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