Infineon Technologies - IRF3709PBF

KEY Part #: K6402773

IRF3709PBF Pagpepresyo (USD) [55666pcs Stock]

  • 1 pcs$0.67732
  • 10 pcs$0.59872
  • 100 pcs$0.47325
  • 500 pcs$0.34717
  • 1,000 pcs$0.27408

Bilang ng Bahagi:
IRF3709PBF
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 30V 90A TO-220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IRF3709PBF electronic components. IRF3709PBF can be shipped within 24 hours after order. If you have any demands for IRF3709PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3709PBF Mga katangian ng produkto

Bilang ng Bahagi : IRF3709PBF
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 30V 90A TO-220AB
Serye : HEXFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 90A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 41nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2672pF @ 16V
Tampok ng FET : -
Power Dissipation (Max) : 3.1W (Ta), 120W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220AB
Pakete / Kaso : TO-220-3

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