IRFH8307TRPBF Pagpepresyo (USD) [106505pcs Stock]
- 1 pcs$0.34728
- 4,000 pcs$0.33336
- Bilang ng Bahagi:
- IRFH8307TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 100A PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Diode - Zener - Single, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH8307TRPBF electronic components. IRFH8307TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8307TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8307TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH8307TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 100A PQFN
Serye :
HEXFET®, StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
42A (Ta), 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7200pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-PQFN (5x6)
Pakete / Kaso :
8-PowerTDFN
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