Vishay Siliconix - SIHP35N60E-GE3

KEY Part #: K6399800

SIHP35N60E-GE3 Pagpepresyo (USD) [13957pcs Stock]

  • 1 pcs$2.95269
  • 10 pcs$2.63715
  • 100 pcs$2.16247
  • 500 pcs$1.75107
  • 1,000 pcs$1.47680

Bilang ng Bahagi:
SIHP35N60E-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 600V 32A TO220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SIHP35N60E-GE3 electronic components. SIHP35N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP35N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHP35N60E-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SIHP35N60E-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 600V 32A TO220AB
Serye : E
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 32A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 94 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 132nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2760pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 250W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220AB
Pakete / Kaso : TO-220-3

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