[2902pcs Stock]
- Bilang ng Bahagi:
- BUZ31H3046XKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 14.5A TO262-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays, Mga module ng Power driver, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BUZ31H3046XKSA1 electronic components. BUZ31H3046XKSA1 can be shipped within 24 hours after order. If you have any demands for BUZ31H3046XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUZ31H3046XKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BUZ31H3046XKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 14.5A TO262-3
Serye :
SIPMOS®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
14.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 9A, 5V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1120pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
95W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO262-3-1
Pakete / Kaso :
TO-262-3 Long Leads, I²Pak, TO-262AA
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