IRFI1010NPBF Pagpepresyo (USD) [46297pcs Stock]
- 1 pcs$0.81111
- 10 pcs$0.73084
- 100 pcs$0.58735
- 500 pcs$0.45683
- 1,000 pcs$0.37851
- Bilang ng Bahagi:
- IRFI1010NPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 49A TO220FP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Diode - Rectifiers - Single, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFI1010NPBF electronic components. IRFI1010NPBF can be shipped within 24 hours after order. If you have any demands for IRFI1010NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI1010NPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFI1010NPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 49A TO220FP
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
49A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
58W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB Full-Pak
Pakete / Kaso :
TO-220-3 Full Pack
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